The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jul. 09, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chun Hao Liao, Hsinchu, TW;
Chu Fu Chen, Hsinchu County, TW;
Chin-Lung Chen, Hsinchu County, TW;
Victor Chiang Liang, Hsinchu, TW;
Mingo Liu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/48 (2006.01); H01L 29/732 (2006.01); H01L 29/735 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4814 (2013.01); H01L 29/732 (2013.01); H01L 29/735 (2013.01); H01L 29/0692 (2013.01);
Abstract
An integrated circuit device includes a lightly doped region such as the base region of a bipolar junction transistor within a semiconductor body. The device further includes a UV barrier layer formed over the lightly doped region. The UV barrier protects the lightly doped region from damage that can occur during high energy plasma etching or UV irradiation to erase EPROM.