The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Oct. 28, 2014
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Sakae Matsuzaki, Tokyo, JP;

Hiroyuki Takahashi, Tokyo, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H01L 21/78 (2006.01); H01L 21/822 (2006.01); H01L 21/784 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3043 (2013.01); H01L 21/3046 (2013.01); H01L 21/3065 (2013.01); H01L 21/78 (2013.01); H01L 21/784 (2013.01); H01L 21/822 (2013.01);
Abstract

A wafer processing method including a mask forming step of forming a mask for covering a region corresponding to each device on a functional layer formed on the front side of a substrate constituting a wafer, a groove forming step of spraying a fluid containing abrasive grains against the front side of the wafer to thereby form a groove for dividing the functional layer along each street, and an etching step of performing dry etching from the front side of the wafer to thereby form an etched groove along each street. Accordingly, it is possible to prevent that the functional layer may be separated to cause damage to each device. Furthermore, a wide area of the wafer can be processed at a time, so that the productivity can be improved.


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