The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Mar. 20, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Kie Y. Ahn, Chappaqua, NY (US);
Leonard Forbes, Corvallis, OR (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01L 21/314 (2006.01); H01L 21/28 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/308 (2013.01); C23C 16/45531 (2013.01); C23C 16/45546 (2013.01); H01L 21/02178 (2013.01); H01L 21/02189 (2013.01); H01L 21/28158 (2013.01); H01L 21/3143 (2013.01); H01L 28/40 (2013.01);
Abstract
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices. Forming the dielectric layer may include depositing zirconium oxide using atomic layer deposition and precursor chemicals, followed by depositing aluminum nitride using precursor chemicals, and repeating. The dielectric layer may be used as the gate insulator of a MOSFET, a capacitor dielectric, and a tunnel gate insulator in flash memories.