The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Sep. 24, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 7/04 (2006.01); G11C 16/20 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 7/04 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 16/20 (2013.01); G11C 29/70 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0083 (2013.01);
Abstract
A semiconductor device includes a memory cell array including a plurality of first and second memory cells each comprising a variable resistance element that establishes an electrical resistance that changes in response to an application of a write voltage after a forming voltage has been applied, the first memory cell to which the forming voltage is applied, and the second memory cell to which the forming voltage is not applied, and the second memory cell being configured to store one of first and second logic values constituting first information, the first and second logic values being different from each other.