The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Aug. 08, 2014
Applicant:

Central Glass Company, Limited, Ube-shi, Yamaguchi, JP;

Inventors:

Naoto Takada, Saitama, JP;

Isamu Mori, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); C09K 13/00 (2006.01); H01L 21/3065 (2006.01); C07C 53/48 (2006.01); H01L 21/311 (2006.01); C23F 1/12 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); C07C 53/48 (2013.01); C23F 1/12 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01);
Abstract

Disclosed is an etching gas provided containing CHFCOF. The etching gas may contain, as an additive, at least one kind of gas selected from O, O, CO, CO, F, NF, Cl, Br, I, XF(In this formula, X represents Cl, I or Br. n represents an integer satisfying 1≦n≦7.), CH, CHF, CHF, CHF, N, He, Ar, Ne, Kr and the like, from CH, CH, CH, CH, CH, CH, CH, HI, HBr, HCl, CO, NO, NH, Hand the like, or from CH, CHF, CHFand CHF. This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CFthat places a burden on the environment.


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