The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Mar. 19, 2013
Applicant:
Agency for Science, Technology and Research, Singapore, SG;
Inventors:
Joel K. W. Yang, Singapore, SG;
Michel Bosman, Singapore, SG;
Huigao Duan, Singapore, SG;
Karthik Kumar, Singapore, SG;
In Yee Phang, Singapore, SG;
Assignee:
Agency for Science, Technology and Research, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 1/32 (2006.01); B65B 33/00 (2006.01); B05D 3/00 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
B05D 3/007 (2013.01); B82Y 30/00 (2013.01);
Abstract
A method for plasmonic structure manufacture and for protecting a plasmonic nanostructure during annealing is provided. The method includes: lithographically forming a plasmonic nanostructure on a substrate; encapsulating the plasmonic nanostructure in high temperature resistant material; annealing the plasmonic nanostructure; and removing the high temperature resistant material to reveal the annealed plasmonic nanostructure.