The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Dec. 24, 2013
Applicant:
Ngk Insulators, Ltd., Aichi-prefecture, JP;
Inventors:
Yoshitaka Kuraoka, Okazaki, JP;
Makoto Iwai, Kasugai, JP;
Assignee:
NGK INSULATORS, LTD., Aichi-prefecture, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); C30B 19/12 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/22 (2010.01); H01L 21/02 (2006.01); C30B 19/02 (2006.01); C30B 29/40 (2006.01); C30B 33/06 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 29/406 (2013.01); C30B 33/06 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/22 (2013.01);
Abstract
A composite substrateincludes a sapphire bodyA, a seed crystal filmcomposed of gallium nitride crystal and provided on a surface of the sapphire body, and a gallium nitride crystal layergrown on the seed crystal filmand having a thickness of 200 μm or smaller. Voidsare provided along an interface between the sapphire bodyA and the seed crystal filmin a void ratio of 4.5 to 12.5 percent.