The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jul. 22, 2011
Applicant:
Tadahiro Ohmi, Sendai, JP;
Inventor:
Tadahiro Ohmi, Sendai, JP;
Assignee:
National University Corporation Tohoku University, Miyagi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/0368 (2006.01); H01L 31/0376 (2006.01); H01L 31/0392 (2006.01); H01L 31/075 (2012.01); H01L 31/052 (2014.01); H01L 31/046 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022466 (2013.01); H01L 31/028 (2013.01); H01L 31/03682 (2013.01); H01L 31/03762 (2013.01); H01L 31/03921 (2013.01); H01L 31/075 (2013.01); H01L 31/046 (2014.12); H01L 31/052 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02E 10/548 (2013.01);
Abstract
Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n-type a-Si layer is in contact with a transparent electrode formed by an n-type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.