The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Feb. 14, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Han-Jin Lim, Seoul, KR;
Bong-Hyun Kim, Incheon, KR;
Seok-Woo Nam, Seongnam-si, KR;
Dong-Woon Shin, Seongnam-si, KR;
In-Sang Jeon, Seoul, KR;
Soo-Jin Hong, Guri-Si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):HSiA(NRR)  (1)HSi(NAR)  (2)HSi(R)(R)  (3)wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R, R, R, and Rare each independently selected from the group of H, aryl, perhaloaryl, Calkyl, and Cperhaloalkyl, and Ris aryl in which at least one hydrogen is replaced with a halogen or Calkyl in which at least one hydrogen is replaced with a halogen.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile