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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9230864 B1

PDFFull Text
Date of Patent:
Jan. 05, 2016

Filed:

Oct. 16, 2014

Method of forming a semiconductor device having a metal gate

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chia-Lin Lu, Taouyuan County, TW;

Chun-Lung Chen, Tainan, TW;

Kun-Yuan Liao, Hsin-Chu, TW;

Feng-Yi Chang, Tainan, TW;

Shi-Xiong Lin, Yilan County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, CN;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82345 (2013.01); H01L 21/28088 (2013.01); H01L 21/28114 (2013.01); H01L 21/823462 (2013.01); H01L 21/823842 (2013.01); H01L 29/7831 (2013.01);
Abstract

A method of forming a semiconductor device having a metal gate includes the following steps. First of all, a first gate trench is formed in a dielectric layer. Next, a first work function layer is formed, covering the first gate trench. Then, a protection layer is formed in the first gate trench, also on the first work function layer. Then, a patterned sacrificial mask layer is formed in the first gate trench to expose a portion of the protection layer. After that, the exposed protection layer is removed, to form a U-shaped protection layer in the first gate trench. As following, a portion of the first work function layer under the exposed protection layer is removed, to form a U-shaped first work function layer in the first gate trench. Finally, the patterned sacrificial mask layer and the U-shaped protection layer are completely removed.

Find Patent Forward Citations

Lu, Chia-Lin. (2016). Method of forming a semiconductor device having a metal gate (U.S. Patent No. 9230864). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9230864

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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