The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Dec. 17, 2013
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Ernest Li, Shanghai, CN;
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Pudong, Shanghai, CN;
Abstract
An interconnect structure and a forming method thereof are provided. The method includes: providing a semiconductor substrate which has semiconductor devices formed therein; forming a conductive layer on the semiconductor substrate; forming a mask layer on the conductive layer; forming a groove in the mask layer and the conductive layer, the groove having a depth-to-width ratio greater than 0.8; and depositing an intermetallic dielectric layer to cover the mask layer and fill the groove, wherein an air gap is formed in a portion of the intermetallic dielectric layer in the groove. The mask layer is formed on the conductive layer, so that the depth-to-width ratio of the groove between adjacent interconnects is increased. Besides, the air gap with a relatively large size is formed between two adjacent interconnects. Therefore, a dielectric constant and parasitic capacitance between adjacent interconnects are reduced evidently, and the performance of the semiconductor devices is improved.