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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9230808 B1

PDFFull Text
Expired
Date of Patent:
Jan. 05, 2016

Filed:

Aug. 02, 2013

Method of fabricating semiconductor device using photo key

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Je-woo Han, Hwaseong-si, KR;

Jun-ho Yoon, Suwon-si, KR;

Dong-chan Kim, Seoul, KR;

Gyung-jin Min, Seongnam-si, KR;

Jae-hong Park, Seongnam-si, KR;

Yong-moon Jang, Incheon, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Mary Wilczewski

Assistant Examiner:

Erik T Peterson

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/00 (2006.01); H01L 23/544 (2006.01); H01L 21/027 (2006.01); G03F 7/20 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/027 (2013.01); G03F 7/70633 (2013.01); H01L 23/544 (2013.01); H01L 27/10894 (2013.01); H01L 28/40 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of fabricating a semiconductor device includes providing a substrate that is divided into a first region on which a pattern layer is formed and a second region on which a photo key is formed. A silicon layer is formed on the first region and second region of the substrate. The silicon layer is patterned to form a hole exposing a photo key portion of the second region on which the photo key is formed. A buried oxide layer is formed to fill the hole exposing the photo key portion. The silicon layer is patterned by using the photo key formed under the buried oxide layer to form a silicon pattern layer.

Find Patent Forward Citations

Han, Je-woo. (2016). Method of fabricating semiconductor device using photo key (U.S. Patent No. 9230808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9230808

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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