The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Aug. 02, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Je-woo Han, Hwaseong-si, KR;
Jun-ho Yoon, Suwon-si, KR;
Dong-chan Kim, Seoul, KR;
Gyung-jin Min, Seongnam-si, KR;
Jae-hong Park, Seongnam-si, KR;
Yong-moon Jang, Incheon, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes providing a substrate that is divided into a first region on which a pattern layer is formed and a second region on which a photo key is formed. A silicon layer is formed on the first region and second region of the substrate. The silicon layer is patterned to form a hole exposing a photo key portion of the second region on which the photo key is formed. A buried oxide layer is formed to fill the hole exposing the photo key portion. The silicon layer is patterned by using the photo key formed under the buried oxide layer to form a silicon pattern layer.