The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jun. 26, 2013
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Chris Nga Yee Avila, Saratoga, CA (US);
Gautam Ashok Dusija, Milpitas, CA (US);
Yingda Dong, San Jose, CA (US);
Jian Chen, Menlo Park, CA (US);
Man Lung Mui, Fremont, CA (US);
Alexander Kwok-Tung Mak, Los Altos Hills, CA (US);
Seungpil Lee, San Ramon, CA (US);
Assignee:
SanDisk Technologies Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/3427 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01);
Abstract
In a nonvolatile memory array in which a NAND string includes a back gate that has a charge storage element, the threshold voltage of the back gate is monitored, and if the threshold voltage deviates from a desired threshold voltage range, charge is added to, or removed from the charge storage element to return the threshold voltage to the desired threshold voltage range.