The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Mar. 27, 2014
Applicant:
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Inventors:
Gisela von Blanckenhagen, Aalen, DE;
Dirk Heinrich Ehm, Lauchheim, DE;
Assignee:
Carl Zeiss SMT GmbH, Oberkochen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/70 (2006.01); G02B 5/08 (2006.01); G03F 7/20 (2006.01); G21K 1/06 (2006.01); C23C 16/30 (2006.01); B82Y 10/00 (2011.01); F21V 9/04 (2006.01); F21V 9/06 (2006.01); G02B 5/20 (2006.01); B05D 3/06 (2006.01);
U.S. Cl.
CPC ...
G03F 7/702 (2013.01); B82Y 10/00 (2013.01); C23C 16/308 (2013.01); G02B 5/0891 (2013.01); G03F 7/70316 (2013.01); G03F 7/70958 (2013.01); G21K 1/062 (2013.01); G21K 2201/067 (2013.01);
Abstract
A mirror () for use e.g. in an EUV lithography apparatus or an EUV mask metrology system, with: a substrate () and a coating () reflective to EUV radiation (), the reflective coating having a capping layer () composed of an oxynitride, in particular composed of SiNO, wherein a nitrogen proportion x in the oxynitride NOis between 0.4 and 1.4. Also provided are an EUV lithography apparatus having at least one such EUV mirror () and a method for operating such an EUV lithography apparatus.