The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Jul. 30, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tsai-Fu Hsiao, Hsinchu, TW;

Chun-Yao Wang, Zhubei, TW;

Tai-Chun Huang, Hsinchu, TW;

Tze-Liang Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4412 (2013.01); C23C 16/455 (2013.01); H01L 21/67098 (2013.01);
Abstract

A wafer processing chamber is provided, including a first processing gas supply unit and a second processing gas supply unit. The first processing gas supply unit is configured for supplying a first processing gas to form a first processing zone in the wafer processing chamber. The second processing gas supply unit is configured for supplying a second processing gas into the wafer processing chamber to form a second processing zone in the wafer processing chamber. In the wafer processing chamber, the first processing zone and the second processing zone are virtually separated from each other, such that a process wafer in the first processing zone may be performed a different process from another process wafer in the second processing zone at the same time. Further, a heat treatment apparatus and a method for processing wafers also provide herein.


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