The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Aug. 30, 2012
Applicants:

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Lei BI, Boise, ID (US);

Beth R. Cook, Meridian, ID (US);

Dale W. Collins, Boise, ID (US);

Inventors:

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Lei Bi, Boise, ID (US);

Beth R. Cook, Meridian, ID (US);

Dale W. Collins, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); G11C 13/0007 (2013.01); H01L 45/1233 (2013.01); H01L 45/145 (2013.01); G11C 2213/12 (2013.01); G11C 2213/51 (2013.01); G11C 2213/55 (2013.01); H01L 27/24 (2013.01);
Abstract

Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.


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