The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Jan. 24, 2011
Applicants:

Suntae Hwang, Seoul, KR;

Sehwon Ahn, Seoul, KR;

Seungyoon Lee, Seoul, KR;

Inventors:

Suntae Hwang, Seoul, KR;

Sehwon Ahn, Seoul, KR;

Seungyoon Lee, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/056 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022425 (2013.01); H01L 31/056 (2014.12); Y02E 10/52 (2013.01);
Abstract

A silicon thin film solar cell is discussed. The silicon thin film solar cell includes a substrate on which light is incident, a first electrode positioned on the substrate at a surface opposite a surface of the substrate on which the solar light is incident, a second electrode positioned on the first electrode, at least one photoelectric conversion unit positioned between the first electrode and the second electrode, and a back reflection layer positioned between the at least one photoelectric conversion unit and the second electrode. The back reflection layer includes a first reflection layer formed of a material having an absorption coefficient equal to or less than 400 cmwith respect to light having a wavelength equal to or greater than 700 nm.


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