The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 26, 2014
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Wei-Chun Chou, New Taipei, TW;
Yi-Hung Chiu, Yilan, TW;
Chu-Feng Chen, New Taipei, TW;
Cheng-Yi Hsieh, Jhubei, TW;
Chung-Ren Lao, Taichung, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A high voltage semiconductor device is provided. The device includes a semiconductor substrate having a high voltage well with a first conductivity type therein. A gate structure is disposed on the semiconductor substrate of the high voltage well. A source doped region and a drain doped region are in the high voltage well on both sides of the gate structure, respectively. A lightly doped region with the first conductivity type is between the source and drain doped regions and relatively near to the source doped region. The disclosure also presents a method for fabricating a high voltage semiconductor device.