The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Jan. 06, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Chieh Pu, New Taipei, TW;
Ming-Tsung Lee, Yilan County, TW;
Cheng-Hua Yang, Hsinchu, TW;
Nien-Chung Li, Hsin-Chu, TW;
Wen-Fang Lee, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A high voltage metal-oxide-semiconductor (HV MOS) device includes a substrate including a first conductivity type, a gate positioned on the substrate, a drain region formed in the substrate, the drain region including a second conductivity type, and a source region formed in the substrate, where the source region includes at least one first part and at least one second part, the first part includes the second conductivity type, the second part includes the first conductivity type, and the first conductivity type and the second conductivity type are complementary.