The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Feb. 28, 2014
Applicants:
Whan-kyun Kim, Seoul, KR;
Young-hyun Kim, Seoul, KR;
Woo-jin Kim, Yongin-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/12 (2013.01);
Abstract
A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region.