The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Jun. 04, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Jung-Yi Guo, Tainan, TW;
Chun-Min Cheng, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 29/66833 (2013.01);
Abstract
Present example embodiments relate generally to semiconductor devices and methods of fabricating a semiconductor device comprising forming an insulating base layer over a surface of a substrate. The method further comprises forming a multilayer over the insulating base layer, the multilayer having conducting and insulating layers. The method further comprises etching a pattern in the multilayer and forming a charge storage layer over the patterned multilayer. The method further comprises forming a protective silicon layer over the charge storage layer, followed by performing a heat treatment process.