The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 18, 2014
Micron Technology, Inc., Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming an array of gated devices includes forming trenches between walls that longitudinally extend in rows and project elevationally from a substrate. The walls comprise semiconductor material. Gate dielectric is formed within the trenches laterally over side surfaces of the walls and conductive gate material is formed within the trenches laterally over side surfaces of the gate dielectric. Side surfaces of an elevationally inner portion of the gate material within the trenches are laterally covered with masking material and side surfaces of an elevationally inner portion of the gate material within the trenches are laterally uncovered by the masking material. The elevationally outer portion of the gate material that is laterally uncovered by the masking material is removed while the side surfaces of the elevationally inner portion of the gate material are laterally covered by the masking material to form gate lines within the trenches laterally over elevationally inner portions of the walls.