The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Oct. 04, 2013
Mie Fujitsu Semiconductor Limited, Kuwana, JP;
Lucian Shifren, San Jose, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Sachin R. Sonkusale, Los Gatos, CA (US);
Mie Fujitsu Semiconductor Limited, Kuwana, Mie, JP;
Abstract
A semiconductor structure includes a first PMOS transistor element having a gate region with a first gate metal associated with a PMOS work function and a first NMOS transistor element having a gate region with a second metal associated with a NMOS work function. The first PMOS transistor element and the first NMOS transistor element form a first CMOS device. The semiconductor structure also includes a second PMOS transistor that is formed in part by concurrent deposition with the first NMOS transistor element of the second metal associated with a NMOS work function to form a second CMOS device with different operating characteristics than the first CMOS device.