The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Aug. 06, 2013
Texas Instruments Incorporated, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An integrated circuit is formed to include a first polarity MOS transistor and a second, opposite, polarity MOS transistor. A hard mask of silicon-doped boron nitride (SiBN) with 1 atomic percent to 30 atomic percent silicon is formed over the first polarity MOS transistor and the second polarity MOS transistor. The hard mask is removed from source/drain regions of the first polarity MOS transistor and left in place over the second polarity MOS transistor. Semiconductor material is epitaxially grown at the source/drain regions of the first polarity MOS transistor while the hard mask is in place. Subsequently, the hard mask is removed from the second polarity MOS transistor.