The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Jun. 01, 2015
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Himadri Sekhar Pal, Spring, TX (US);
Ebenezer Eshun, Frisco, TX (US);
Shashank S. Ekbote, San Diego, CA (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 27/11 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823425 (2013.01); H01L 21/26513 (2013.01); H01L 21/311 (2013.01); H01L 21/823412 (2013.01); H01L 27/1116 (2013.01);
Abstract
In an integrated circuit that includes an NMOS logic transistor, an NMOS SRAM transistor, and a resistor, the gate of the SRAM transistor is doped at the same time that the resistor is doped, thereby allowing the gate of the logic transistor to be separately doped without requiring any additional masking steps.