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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9224636 B1

PDFFull Text
Date of Patent:
Dec. 29, 2015

Filed:

May. 01, 2014

Methods of forming through silicon via openings

Applicant:

Tsmc Solid State Lighting Ltd., Hsinchu, TW;

Inventors:

Chyi Shyuan Chern, Taipei, TW;

Hsin-Hsien Wu, Hsinchu, TW;

Chun-Lin Chang, Jhubei, TW;

Hsing-Kuo Hsia, Jhubei, TW;

Hung-Yi Kuo, Taipei, TW;

Assignee:

TSMC SOLID STATE LIGHTING LTD., Hsinchu, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Savitr Mulpuri

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76801 (2013.01); H01L 21/02057 (2013.01); H01L 21/3065 (2013.01); H01L 21/76898 (2013.01);
Abstract

A method includes forming an opening in a substrate, and the opening completely extends through the substrate. A recast material is formed on sidewalls of the substrate exposed by the opening. A first chemical is applied in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical. Moreover, A second chemical is applied in the opening to remove the residue of the first chemical, and the second chemical is different from the first chemical.

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Chern, Chyi. (2015). Methods of forming through silicon via openings (U.S. Patent No. 9224636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9224636

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