The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Sep. 30, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Seol-Min Yi, Seoul, KR;
Dae-Hyun Moon, Gyeonggi-do, KR;
Joon-Seok Moon, Seoul, KR;
Se-Keun Park, Gyeonggi-do, KR;
Hyeoung-Won Seo, Gyeonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.