The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Jan. 17, 2012
Applicants:
Ananth Indrakanti, Fremont, CA (US);
Rajinder Dhindsa, San Jose, CA (US);
Inventors:
Ananth Indrakanti, Fremont, CA (US);
Rajinder Dhindsa, San Jose, CA (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/3065 (2006.01); H01L 21/31 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32091 (2013.01); H01L 21/027 (2013.01); H01L 21/3065 (2013.01); H01L 21/31 (2013.01); H01L 21/311 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method for etching features in an etch layer in a plasma processing chamber is provided. An etch gas is flowed into the plasma processing chamber. A top outer electrode is maintained at a temperature of at least 150° C. during the etching of the features. The etch gas is formed into a plasma, which etches the etch layer.