The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Sep. 11, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Che-Ming Chang, Longtan Township, TW;
Lee-Chuan Tseng, New Taipei, TW;
Shih-Wei Lin, Taipei, TW;
Chih-Jen Chan, Changhua, TW;
Yuan-Chih Hsieh, Hsinchu, TW;
Ming Chyi Liu, Hsinchu, TW;
Chung-Yen Chou, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of etching a trench in a substrate is provided. The method repeatedly alternates between using a fluorine-based plasma to etch a trench, which has trench sidewalls, into a selected region of the substrate; and using a fluorocarbon plasma to deposit a liner on the trench sidewalls. The liner, when formed and subsequently etched, has an exposed sidewall surface that includes scalloped recesses. The trench, which includes the scalloped recesses, is then bombarded with a molecular beam where the molecules are directed on an axis parallel to the trench sidewalls to reduce the scalloped recesses.