The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Nov. 18, 2013
Applicant:

Intermolecular Inc., San Jose, CA (US);

Inventors:

Kevin Kashefi, San Jose, CA (US);

Frank Greer, Pasadena, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/314 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02304 (2013.01); H01L 21/0228 (2013.01); H01L 21/02046 (2013.01); H01L 21/02181 (2013.01); H01L 21/02236 (2013.01); H01L 21/02252 (2013.01); H01L 21/02301 (2013.01); H01L 29/517 (2013.01);
Abstract

Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware may also be used. The plasma source may be used to generate activated species operable to alter the surface of the semiconductor materials. Further, the plasma source may be used to generate activated species operable to enhance the nucleation of deposition precursors on the semiconductor surface.


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