The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2015

Filed:

Jun. 16, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Yoichi Minemura, Yokkaichi, JP;

Takayuki Tsukamoto, Yokkaichi, JP;

Hiroshi Kanno, Yokkaichi, JP;

Takamasa Okawa, Yokkaichi, JP;

Atsushi Yoshida, Yokkaichi, JP;

Hideyuki Tabata, Yokkaichi, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0064 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0076 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract

A semiconductor memory device according to an embodiment includes a memory cell array and a control circuit. The memory cell array includes first lines and second lines intersecting each other, a third line commonly connecting to the first lines, memory cells disposed at intersections of the first lines and the second lines, respectively. The control circuit is configured to execute a state determining operation detecting a voltage of the third line, and adjust a voltage applied to the first lines and the second lines during a resetting operation or a setting operation based on a result of the state determining operation. The resetting operation raises a resistance value of the variable resistance element. The setting operation lowers the resistance value of the variable resistance element.


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