The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
May. 02, 2013
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventors:
Assignee:
Seiko Epson Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 3/44 (2006.01); G01N 21/65 (2006.01); B82Y 15/00 (2011.01);
U.S. Cl.
CPC ...
G01N 21/658 (2013.01); G01N 21/65 (2013.01); B82Y 15/00 (2013.01); G01N 2201/06113 (2013.01); Y10S 977/954 (2013.01);
Abstract
A sample analysis device capable of realizing the enhancement of a near-field light while increasing a hotspot areal density is provided. In a sample analysis device, multiple nanostructures are arranged on the surface of a base body. A dielectric body is covered with a metal film in each nanostructure. The nanostructures form multiple nanostructure lines. In each nanostructure line, the nanostructures are arranged at a first pitch SP which is smaller than the wavelength of an excitation light and the nanostructure lines are arranged in parallel with one another at a second pitch LP which is greater than the first pitch SP.