The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Feb. 27, 2012
Kazuhiko Kusunoki, Nishinomiya, JP;
Kazuhito Kamei, Hyogo, JP;
Nobuyoshi Yashiro, Itami, JP;
Junichi Koike, Sendai, JP;
Kazuhiko Kusunoki, Nishinomiya, JP;
Kazuhito Kamei, Hyogo, JP;
Nobuyoshi Yashiro, Itami, JP;
Junichi Koike, Sendai, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Tokyo, JP;
Abstract
A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×10atoms/cm. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.