The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Apr. 21, 2013
Industrial Technology Research Institute, Hsinchu, TW;
Pei-Ling Tseng, Miaoli County, TW;
Keng-Li Su, Hsinchu County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A through silicon via (TSV) repair circuit of a semiconductor apparatus is provided. The TSV repair circuit includes a first chip, at least one second chip, at least two TSVs, at least two data path circuits, and an output logic circuit. Each data path circuit includes an input driving circuit, a short-circuit detection circuit, a bias circuit, and a leakage current cancellation circuit. The input driving circuit transforms an input signal into a pending signal and transmits the pending signal to a first terminal of the corresponding TSV. The short-circuit detection circuit detects a short circuit between the corresponding TSV and a silicon substrate according to the input signal and the first terminal of the TSV and generates a short-circuit detection output signal. The leakage current cancellation circuit prevents a leakage current produced by a first level voltage from entering the silicon substrate according to the short-circuit detection output signal.