The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Mar. 13, 2013
Globalfoundries Inc., Grand Cayman, KY;
Renata Camillo-Castillo, Essex Junction, VT (US);
David L. Harame, Essex Junction, VT (US);
Vibhor Jain, Essex Junction, VT (US);
Vikas K. Kaushal, Essex Junction, VT (US);
Marwan H. Khater, Astoria, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Fabrication methods, device structures, and design structures for a bipolar junction transistor. A dielectric structure is formed that is coextensive with a single crystal semiconductor material of a substrate in an active device region. A semiconductor layer is formed that includes a single crystal section coupled with the active device region. The semiconductor layer has an edge that overlaps with a top surface of the dielectric structure. An intrinsic base layer is formed on the semiconductor layer.