The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Apr. 10, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chien-Chung Wang, New Taipei, TW;
Wei-Min Tseng, New Taipei, TW;
Shih-Guo Shen, New Taipei, TW;
Huey-Chi Chu, Hsin-Chu, TW;
Wen-Chuan Chiang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a MIM capacitor, and an associated method of formation. In some embodiments, the MIM capacitor has a first electrode having a bottom capacitor metal layer disposed over a semiconductor substrate. A second electrode having a middle capacitor metal layer overlies the bottom capacitor metal layer. A third electrode having a top capacitor metal layer has a stepped structure is laterally and vertically separated from the middle capacitor metal layer by a capacitor dielectric layer continuously extends from a first position between the bottom capacitor metal layer and the middle capacitor metal layer, to a second position between the middle capacitor metal layer and the top capacitor metal layer. The capacitor dielectric layer allows for the MIM capacitor to have a structure that improves fabrication of the capacitor.