The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Jun. 13, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Aneesh Nainani, Palo Alto, CA (US);
Mathew Abraham, Mountain View, CA (US);
Er-Xuan Ping, Fremont, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/225 (2013.01); H01L 21/2254 (2013.01); H01L 29/66803 (2013.01);
Abstract
Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.