The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Oct. 18, 2013
Globalfoundries Inc., Grand Cayman, KY;
Matheson Tri-gas, Inc., Basking Ridge, NJ (US);
Paul D. Brabant, Scodack, NY (US);
Keith Chung, Guilderland, NY (US);
Hong He, Schenectady, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Manabu Shinriki, Longmont, CO (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
MATHESON TRI-GAS, INC., Basking Ridge, NJ (US);
Abstract
A high order silane having a formula of SiH, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material. The combination of the high order silane and the germanium precursor gas provides a high deposition rate in the Frank-van der Merwe growth mode for deposition of a single crystalline semiconductor alloy material.