The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 16, 2013
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02126 (2013.01); C23C 16/30 (2013.01); C23C 16/45538 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/67 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a predetermined element-containing gas to the substrate; supplying a carbon-containing gas and a plasma-excited inert gas to the substrate; supplying an oxidizing gas to the substrate; and supplying a nitriding gas to the substrate.