The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Oct. 23, 2012
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Nian Niles Yang, Mountain View, CA (US);
Chris Nga Yee Avila, Saratoga, CA (US);
Steven T. Sprouse, San Jose, CA (US);
Assignee:
SanDisk Technologies Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 27/115 (2006.01); G06F 12/02 (2006.01); G11C 7/20 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/349 (2013.01); H01L 27/11524 (2013.01); G06F 12/0238 (2013.01); G06F 12/0246 (2013.01); G11C 7/20 (2013.01); Y10T 29/49002 (2015.01);
Abstract
A NAND flash memory chip includes a first partition that has smaller memory cells, with smaller charge storage elements, and a second partition that has larger memory cells, with larger charge storage elements, in the same memory array. Data is selected for storage in the first or second partition according to characteristics, or expected characteristics, of the data.
Yang, Nian. (2015). Flash memory blocks with extended data retention (U.S. Patent No. 9218881). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9218881
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile