The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Apr. 04, 2014
Applicant:

Air Products and Chemicals, Inc., Allentown, PA (US);

Inventors:

Manchao Xiao, San Diego, CA (US);

Iain Buchanan, Stirling, GB;

Moo-Sung Kim, Gyunggi-do, KR;

Sergei Vladimirovich Ivanov, Schnecksville, PA (US);

Xinjian Lei, Vista, CA (US);

Cheol Seong Hwang, Seoul, KR;

Taehong Gwon, Seoul, KR;

Assignee:

Air Products and Chemicals, Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 45/00 (2006.01); C23C 16/22 (2006.01); C23C 16/28 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1616 (2013.01); C23C 16/22 (2013.01); C23C 16/28 (2013.01); C23C 16/305 (2013.01); C23C 16/45525 (2013.01); C23C 16/45531 (2013.01); C23C 16/45553 (2013.01); H01L 45/06 (2013.01); H01L 45/144 (2013.01);
Abstract

Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane.


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