The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Mar. 12, 2013
Tokyo Institute of Technology, Tokyo, JP;
Toshiba Materials Co., Ltd., Yokohama-shi, Kanagawa, JP;
Kuniyuki Kakushima, Tokyo, JP;
Chunmeng Dou, Tokyo, JP;
Parhat Ahmet, Tokyo, JP;
Hiroshi Iwai, Tokyo, JP;
Yoshinori Kataoka, Kawasaki, JP;
TOKYO INSTITUTE OF TECHNOLOGY, Tokyo, JP;
TOSHIBA MATERIALS CO., LTD., Yokohama-Shi, JP;
Abstract
A resistance change memory device with a high ON/OFF radio can be provided according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the first electrode and containing an oxide of the first element, an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer, and a second electrode provided on the oxygen conductive layer. The resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when a voltage between the first electrode and the second electrode is continuously increased from zero.