The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Jun. 16, 2014
Applicant:

Tsmc Solid State Lighting Ltd., Hsinchu, TW;

Inventors:

Chi-Xiang Tseng, Kaohsiung, TW;

Hsiao-Wen Lee, Hsinchu, TW;

Min-Sheng Wu, Taoyuan County, TW;

Tien-Min Lin, Chiayi, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 27/15 (2006.01); H01L 33/46 (2010.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 33/505 (2013.01); H01L 33/46 (2013.01); H01L 33/508 (2013.01); H01L 33/54 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A lighting apparatus includes a first doped semiconductor layer, a light-emitting layer disposed over the first doped semiconductor layer, a second doped semiconductor layer disposed over the light-emitting layer, a first conductive terminal, a second conductive terminal, and a photo-conversion layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. The first conductive terminal and the second conductive terminal each are disposed below the first doped semiconductor layer. The photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.


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