The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Jun. 10, 2014
Applicant:
Cambridge Cmos Sensors Limited, Cambridge, GB;
Inventors:
Syed Zeeshan Ali, Cambridgeshire, GB;
Florin Udrea, Cambridgeshire, GB;
Julian Gardner, Warwickshire, GB;
Richard Henry Hooper, Cambridgeshire, GB;
Andrea De Luca, Cambridgeshire, GB;
Mohamed Foysol Chowdhury, Cambridgeshire, GB;
Ilie Poenaru, Cambridgeshire, GB;
Assignee:
Cambridge CMOS Sensors Limited, Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/34 (2010.01); H05B 3/26 (2006.01); G01J 5/12 (2006.01); G01J 5/08 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/34 (2013.01); G01J 5/0853 (2013.01); G01J 5/12 (2013.01); H05B 3/267 (2013.01); H01L 27/153 (2013.01); H01L 33/0054 (2013.01); H05B 2203/032 (2013.01); H05B 2214/04 (2013.01);
Abstract
An infra-red (IR) device comprising a dielectric membrane formed on a silicon substrate comprising an etched portion; and at least one patterned layer formed within or on the dielectric membrane for controlling IR emission or IR absorption of the IR device, wherein the at least one patterned layer comprises laterally spaced structures.