The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Feb. 06, 2014
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Dexter Xueming Tan, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/26513 (2013.01); H01L 21/31053 (2013.01); H01L 21/76243 (2013.01); H01L 29/0649 (2013.01); H01L 29/6681 (2013.01);
Abstract
Devices and methods for forming a device are presented. A substrate prepared with a device region is provided. A fin is formed in the device region. The fin includes top and bottom portions. An amorphous isolation buffer is formed at least in the bottom fin portion, leaving the top fin portion crystalline. The top fin portion serves as a body of a fin type transistor.