The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Jun. 11, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Simon Su-Horng Lin, Hsinchu, TW;
Chi-Ming Yang, Hsian-San District, TW;
Chyi Shyuan Chern, Taipei, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/49 (2006.01); C23C 14/02 (2006.01); C23C 14/04 (2006.01); C23C 14/18 (2006.01); C23C 14/22 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/06 (2006.01); C23C 16/48 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); C23C 14/022 (2013.01); C23C 14/046 (2013.01); C23C 14/18 (2013.01); C23C 14/221 (2013.01); C23C 16/0263 (2013.01); C23C 16/045 (2013.01); C23C 16/06 (2013.01); C23C 16/48 (2013.01); C23C 16/484 (2013.01); H01L 21/2855 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H01L 21/76862 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01);
Abstract
A gate structure including a substrate and a gate dielectric layer formed over the substrate. The gate structure further includes a workfunction layer over the gate dielectric layer and spacers enclosing the gate dielectric layer and the workfunction layer. A top surface of a portion of the workfunction layer in contact with sidewalls of the spacer is a same distance from the gate dielectric layer as a top surface of a center portion of the work function layer.