The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Jul. 19, 2013
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Shoji Akiyama, Annaka, JP;
Atsuo Ito, Tokyo, JP;
Yuji Tobisaka, Annaka, JP;
Makoto Kawai, Annaka, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
Method of making a bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature of from 200° C. to 350° C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate.