The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9214360 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 15, 2015

Filed:

May. 01, 2013
Applicants:

Globalfoundries Inc., Grand Cayman, KY;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Linus Jang, Clifton Park, NY (US);

Soon-Cheon Seo, Glenmont, NY (US);

Ryan O. Jung, Rensselaer, NY (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/0337 (2013.01); H01L 21/28141 (2013.01); H01L 21/82385 (2013.01);
Abstract

Disclosed herein are methods of patterning features that have differing widths. In one example, the method includes forming a layer of material above a semiconductor substrate, forming a masking layer above the layer of material, wherein the masking layer is comprised of a first plurality features positioned above a first region of the semiconductor substrate and a second plurality of features positioned above a second region of the semiconductor substrate, wherein the first and second plurality of features have the same pitch spacing and wherein the first and second plurality of features have different widths, and performing at least one etching process on the layer of material through the masking layer.


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