The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Dec. 16, 2014
Synaptics Display Devices Gk, Tokyo, JP;
Hiroshi Ishida, Tokyo, JP;
Kazuhiko Sato, Tokyo, JP;
Synaptics Display Devices GK, Tokyo, JP;
Abstract
In a manufacturing method of sequentially forming a gate electrode film of the MOSFET, forming a gate electrode film of the non-volatile memory FET, patterning the gate electrode of the non-volatile memory FET, and patterning the gate electrode of the MOSFET, in order to form the MOSFET and the non-volatile memory FET on the same semiconductor substrate. The value of the product of S/L and H/L is specified in a case that the line of the gate electrode of the non-volatile memory FET is set to L, the space thereof is set to S, and the height thereof is set to H so that the thickness of a resist film on the gate electrode of the non-volatile memory FET which is formed in advance is set to a thickness which is not lost by etching for forming the gate electrode of the MOSFET.