The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

May. 29, 2014
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventor:

Dmitry Shur, Holon, IL;

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/26 (2006.01); H01J 37/28 (2006.01); G01N 21/66 (2006.01); H01L 21/66 (2006.01); G06T 7/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/26 (2013.01); G01N 21/66 (2013.01); G06T 7/0004 (2013.01); H01J 37/28 (2013.01); H01L 22/34 (2013.01); H01J 2237/2809 (2013.01); H01J 2237/2814 (2013.01); H01J 2237/2817 (2013.01);
Abstract

The present disclosure is directed to a method of performing SEM overlay metrology with scan direction substantially aligned with or parallel to feature placement or patterning of overlay target structures. By scanning target structures in the same or similar direction to the feature placement, blurring at the edges of interest is avoided and a line-to-line or edge-to-edge offset between pattern elements is less susceptible to error from blurring at scanned edges of interest. For example, at least two linear pattern elements corresponding to at least two sample layers may be scanned along or parallel to the direction of feature placement (i.e., along or parallel to long edges of the pattern elements).


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